Title :
Issues of BSIM4 model for HF simulation
Author :
Gao, Xiaofang ; Wong, Waisum
Author_Institution :
Intel Commun. Group, Intel Corp., Sacramento, CA, USA
Abstract :
BSIM4 is the most currently industry standard model and with many RF capabilities. We have studied the model´s validity for HF application. There issues are found in the BSIM4. Noise model issue has been reported to Berkeley BSIM4 model group and to be fixed. Other two issues observed can be corrected. Suggestions have been provided.
Keywords :
MOSFET; circuit noise; circuit simulation; semiconductor device models; BSIM4 model issue; HF application; HF simulation; noise model; 1f noise; CMOS technology; Circuit noise; Circuit simulation; Circuit testing; Hafnium; Phase noise; Radio frequency; Semiconductor device modeling; Voltage-controlled oscillators;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN :
0-7803-7904-7
DOI :
10.1109/EDMO.2003.1259969
