Title :
A trench gate LDMOS for RF applications
Author_Institution :
Fairchild Semicond., Discrete Power Technol. Group, San Jose, CA, USA
Abstract :
A new trench gate lateral double diffused MOSFET (TG-LDMOS) device will be discussed and compared to a conventional LDMOS structure. In RF base station applications, the LDMOS power transistor is the preferred technology due to excellent performance versus cost. Through TCAD simulation synopsis, the results will indicate an improvement in the breakdown capability, capacitance reduction, and improved transfer curve characteristics which translate to improved the RF performance.
Keywords :
circuit simulation; microwave power transistors; power MOSFET; radio access networks; radio stations; radiofrequency integrated circuits; semiconductor device breakdown; telecommunication equipment; LDMOS power transistor; LDMOS structure; RF applications; RF performance; TCAD simulation synopsis; capacitance reduction; device breakdown; transfer curve characteristics; trench gate LDMOS; trench gate lateral double diffused MOSFET device; Base stations; Breakdown voltage; Costs; Linearity; MOSFET circuits; Medical simulation; Power MOSFET; Radio frequency; Radiofrequency amplifiers; Semiconductor device manufacture;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN :
0-7803-7904-7
DOI :
10.1109/EDMO.2003.1259970
