A trench gate LDMOS for RF applications

Author

Wilson, P.R.

Author_Institution

Fairchild Semicond., Discrete Power Technol. Group, San Jose, CA, USA

fYear

2003

fDate

17-18 Nov. 2003

Firstpage

43

Lastpage

47

Abstract

A new trench gate lateral double diffused MOSFET (TG-LDMOS) device will be discussed and compared to a conventional LDMOS structure. In RF base station applications, the LDMOS power transistor is the preferred technology due to excellent performance versus cost. Through TCAD simulation synopsis, the results will indicate an improvement in the breakdown capability, capacitance reduction, and improved transfer curve characteristics which translate to improved the RF performance.

Keywords

circuit simulation; microwave power transistors; power MOSFET; radio access networks; radio stations; radiofrequency integrated circuits; semiconductor device breakdown; telecommunication equipment; LDMOS power transistor; LDMOS structure; RF applications; RF performance; TCAD simulation synopsis; capacitance reduction; device breakdown; transfer curve characteristics; trench gate LDMOS; trench gate lateral double diffused MOSFET device; Base stations; Breakdown voltage; Costs; Linearity; MOSFET circuits; Medical simulation; Power MOSFET; Radio frequency; Radiofrequency amplifiers; Semiconductor device manufacture;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on

Print_ISBN

0-7803-7904-7

Type

conf

DOI

10.1109/EDMO.2003.1259970

Filename

1259970