Correlation between the burn-in effect and the extrinsic base surface quality in C-doped GaInP/GaAs HBTs

Author

Borgarino, M. ; Tartarin, J.G. ; Delage, S. ; Plana, R. ; Fantini, F. ; Graffeuil, J.

Author_Institution

Parma Univ., Italy

fYear

1997

fDate

24-25 Nov 1997

Firstpage

43

Lastpage

48

Abstract

The present work compares two sets of carbon doped GaInP/GaAs HBTs. The only difference between the device sets resides in the technology employed to passivate the extrinsic base surface region. The results demonstrate that the burn-in effect is a surface related phenomenon and that the ledge passivation technology is a very promising method to improve device reliability

Keywords

III-V semiconductors; carbon; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; passivation; semiconductor device noise; semiconductor device reliability; DC current gain evolution; GaInP-GaAs:C; GaInP/GaAs:C HBTs; burn-in effect; device reliability; extrinsic base surface quality; forward Gummel plots; input current noise; ledge passivation technology; surface related phenomenon; Chemical vapor deposition; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Leakage current; MOCVD; Passivation; Radiative recombination; Silicon compounds; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668503

Filename

668503