Title :
Correlation between the burn-in effect and the extrinsic base surface quality in C-doped GaInP/GaAs HBTs
Author :
Borgarino, M. ; Tartarin, J.G. ; Delage, S. ; Plana, R. ; Fantini, F. ; Graffeuil, J.
Author_Institution :
Parma Univ., Italy
Abstract :
The present work compares two sets of carbon doped GaInP/GaAs HBTs. The only difference between the device sets resides in the technology employed to passivate the extrinsic base surface region. The results demonstrate that the burn-in effect is a surface related phenomenon and that the ledge passivation technology is a very promising method to improve device reliability
Keywords :
III-V semiconductors; carbon; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; passivation; semiconductor device noise; semiconductor device reliability; DC current gain evolution; GaInP-GaAs:C; GaInP/GaAs:C HBTs; burn-in effect; device reliability; extrinsic base surface quality; forward Gummel plots; input current noise; ledge passivation technology; surface related phenomenon; Chemical vapor deposition; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Leakage current; MOCVD; Passivation; Radiative recombination; Silicon compounds; Stress;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668503
