L-band, high efficiency 25 watt power amplifier using PHEMT for base station system

Author

Wang, Y.H. ; Liu, H.Z. ; Huang, Hou Kuei ; Wang, Cheng C.

Author_Institution

Inst. of Microelectron., National Cheng-Kung Univ., Tainan, Taiwan

fYear

2003

fDate

17-18 Nov. 2003

Firstpage

76

Lastpage

82

Abstract

In this paper, a 1.9 GHz watt high power amplifier using AlGaAs/InGaAs/GaAs PHEMT device for PHS base station applications is demonstrated. This amplifier utilizes a pre-matched FET which is composed of only a single 50 mm FET device and a MIS capacitor in a CuW flange package with other matching circuits on the FR4 PCB. Under 10 Volts and a 4 A dc bias condition, the amplifier has achieved 12.5 dB small-signal gain, 43.7 dBm 1 dB gain compression power with 43% power-added efficiency (PAE) and 44 dBm saturated output power with 41% PAR. In addition, high linearity with 53 dBm third-order intercept point is achieved. The ACP at 600 KHz offset from 1.906 GHz when operating at 39 dBm output power with π/4-DQPSK signal is better than 71 dBc.

Keywords

III-V semiconductors; MIS capacitors; aluminium compounds; differential amplifiers; gallium arsenide; indium compounds; power HEMT; power amplifiers; telecommunication terminals; 25 watt power amplifier; AlGaAs-InGaAs-GaAs; FET device; FR4 PCB; L-band; MIS capacitor; PHEMT device; PHS base station; base station system; flange package; matching circuits; Base stations; FETs; Gain; Gallium arsenide; High power amplifiers; Indium gallium arsenide; L-band; PHEMTs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on

Print_ISBN

0-7803-7904-7

Type

conf

DOI

10.1109/EDMO.2003.1259986

Filename

1259986