Long wavelength InAs/sub 0.2/Sb/sub 0.8/ detectors grown on patterned Si substrates by molecular beam epitaxy

InAs/sub 0.2/Sb/sub 0.8/ photoconductive infrared detectors have been grown by molecular beam epitaxy (MBE) on patterned Si substrates. The MBE growth quality was evaluated using morphology analysis, absorption spectroscopy, and Hall measurements. The performances of InAsSb detectors grown in preetched Si wells, on Si mesas, and on unpatterned GaAs substrates are compared. It was found that the voltage responsivity of detectors grown in Si-wells was comparable to that of detectors grown simultaneously on unpatterned GaAs substrates. It is noted that this study is the first demonstration of a coplanar technology which is ideally suited for the monolithic integration of InAsSb-based Ir-detectors with Si charge coupled devices.