Title :
A 26 GHz low-noise amplifier in 0.18μm CMOS technology
Author :
Yu, Kyung-Wan ; Lu, Yin-Lung ; Huang, Daquan ; Chang, Da-Chiang ; Liang, Victor ; Chang, M. Frank
Author_Institution :
Dept. of Electr. Eng., Calfornia Univ., Los Angeles, CA, USA
Abstract :
A 26 GHz monolithic low-noise amplifier (LNA) is implemented in a standard 0.18μm CMOS technology. Measurements show a gain of 8.9 dB at the peak gain frequency of 25.7GHz and a noise figure of 6.93 dB at 25 GHz. The maximum to minimum gain difference over 25-26GHz is only 0.15dB. At 26GHz, the input and output return losses are better than 14dB and 12dB, respectively. It consumes 30mA of dc current from a 1.8 V power supply. The performance presents feasibility of a standard CMOS process for use in monolithic microwave integrated circuits (MMICs) above 20GHz. The operation frequency of 26GHz is believed to be the highest one ever reported for LNA in a standard CMOS technology.
Keywords :
CMOS analogue integrated circuits; MMIC; amplifiers; integrated circuit noise; 26 GHz low-noise amplifier; CMOS technology; LNA; MMIC; gain difference; input-output return losses; monolithic microwave integrated circuits; noise figure; peak gain frequency; power supply; CMOS integrated circuits; CMOS process; CMOS technology; Frequency measurement; Gain measurement; Low-noise amplifiers; MMICs; Noise figure; Noise measurement; Power supplies;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN :
0-7803-7904-7
DOI :
10.1109/EDMO.2003.1259993
