Title :
A 60+ GHz packaged static divider implemented in InP DHBT technology
Author :
Choudhury, Dehahani ; Mokhtari, Mehran ; Bowen, Ross L. ; Foschaar, James A. ; Jensen, Joseph F.
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
This paper presents a packaged 60+ GHz frequency divider implemented indium phosphide (InP) double-heterostructure bipolar transistor (DHBT) technology. The divider circuit chip was designed using a 135 GHz InP DHBT technology and demonstrated on wafer 100+ GHz toggling frequency. Measurements on the packaged divider showed a 60+ GHz toggle rate. To our knowledge, this is the highest toggling frequency reported on a packaged IC in any technology.
Keywords :
frequency dividers; heterojunction bipolar transistors; indium compounds; integrated circuit packaging; phosphorus compounds; semiconductor device packaging; DHBT technology; InP; divider circuit chip; frequency divider; indium phosphide double-heterostructure bipolar transistor; packaged IC; static divider; toggling frequency; DH-HEMTs; Frequency conversion; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit packaging; Integrated circuit technology; Latches; Millimeter wave technology; Radio frequency; Semiconductor device measurement;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN :
0-7803-7904-7
DOI :
10.1109/EDMO.2003.1259998
