DocumentCode
2495825
Title
Soft breakdown on deep sub-micrometer RF nMOSFET performance
Author
Liu, Yi ; Sadat, Anwar ; Yuan, J.S. ; Yang, Hong
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Central Florida Univ., Orlando, FL, USA
fYear
2003
fDate
17-18 Nov. 2003
Firstpage
122
Lastpage
127
Abstract
Soft breakdown stress on CMOS RF devices has been examined. The total gate capacitance decreases with stress. The analytical equation of cut-off frequency including the gate oxide breakdown is derived. The effect of soft breakdown on the performance of an LC oscillator is examined. The oscillation frequency of the LC oscillator increases after soft breakdown stress.
Keywords
CMOS integrated circuits; MOSFET; leakage currents; radiofrequency integrated circuits; semiconductor device breakdown; CMOS RF devices; LC oscillator; cut-off frequency; deep submicrometer RF nMOSFET; gate capacitance; gate oxide breakdown; nMOSFET performance; oscillation frequency; soft breakdown stress; Breakdown voltage; CMOS technology; Cutoff frequency; Degradation; Electric breakdown; Equations; MOSFET circuits; Oscillators; Radio frequency; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN
0-7803-7904-7
Type
conf
DOI
10.1109/EDMO.2003.1260006
Filename
1260006
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