Title :
Use of MeV ion implantations for isolation of GaAs and InP-based HBTs
Author :
Rezazadeh, Ali A.
Author_Institution :
Dept. of Electr. Eng. & Electron., UMIST, Manchester, UK
Abstract :
He+ and Fe+ ion bombardments in the electrical isolation of InGaP/GaAs and InP/InGaAs HBT structures are presented. Highly resistive regions (∼108 Ω/sq) in GaAs-based HBTs can be created using only He-ion bombardment at room temperature. However, in contrast to GaAs, heavier ions such as Fe-ions are able to produce high electrical isolation (∼5×106Ω/sq) only at 77K bombardment. This is very close to the intrinsic value for n-InGaAs (∼1×107 Ω/sq) and has potential applications in the fabrication of InP-based HBTs with planar geometry designs.
Keywords :
III-V semiconductors; gallium arsenide; helium; heterojunction bipolar transistors; indium compounds; ion implantation; iron; isolation technology; semiconductor device manufacture; Fe; HBT structures; He; InGaP-GaAs; MeV ion implantations; electrical isolation; heterojunction bipolar transistors; ion bombardments; planar geometry designs; resistive regions; room temperature; Annealing; Contact resistance; Electrical resistance measurement; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Implants; Indium gallium arsenide; Sheet materials; Temperature;
Conference_Titel :
Electron Devices for Microwave and Optoelectronic Applications, 2003. EDMO 2003. The 11th IEEE International Symposium on
Print_ISBN :
0-7803-7904-7
DOI :
10.1109/EDMO.2003.1260014
