A novel compact Ka band fourth-harmonic image rejection mixer

Author

Wang, Changsi ; Xu, Yuehang ; Guo, Yunchuan ; Xu, Ruimin ; Yan, Bo

Author_Institution

Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

5

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

4

Abstract

Wth the commercial 0.15-μm pseudomorphic high electron mobility transistor (pHEMT) process, a novel compact Ka-band fourth-harmonic image rejection resistive FET mixer is designed in this paper. A compact Balun with two scale-down Lange couplers used for the impedance transformation is proposed for LO signal pump. The results show that less than 19.5 dB Conversion Loss (CL) in 32~38 GHz, more than 21 dB Image Rejection Ration (IRR) in 32~36.5 GHz, and better than 30 dB and 42 dB high isolation, from LO to RF and 4LO to RF, respectively, can be achieved by the proposed configuration. The chip size is minimized to 1.8 mm×1.4 mm.

Keywords

baluns; high electron mobility transistors; millimetre wave field effect transistors; millimetre wave mixers; IRR; LO signal pump; compact Ka-band fourth-harmonic image rejection resistive FET mixer; compact balun; conversion loss; frequency 32 GHz to 38 GHz; image rejection ration; impedance transformation; pHEMT process; pseudomorphic high electron mobility transistor; scale-down Lange couplers; size 0.15 mum; Couplers; Impedance matching; Logic gates; MMICs; Microwave FET integrated circuits; Mixers; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6230365

Filename

6230365