Design of a 9–25 GHz broadband low noise amplifier using 0.15-μm GaAs HEMT process

Author

Tsai, Jeng-Han ; Lin, Ji-Yang ; Ding, Kun-Yao

Author_Institution

Dept. of Appl. Electron. Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan

Volume

5

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

4

Abstract

A 9-25 GHz low noise amplifier (LNA) is design and implemented in 0.15-μm GaAs HEMT process. Utilizing a resistive feed-back technique, the two-stage common source LNA achieves a broadband and flat frequency response. The measured small-signal gain is 20 ± 1.5 dB from 9-25 GHz and the 3-dB bandwidth is 94 %. With the feature of the resistive feed-back technique, the LNA achieves a 1-dB bandwidth up to 53.3 % from 11 to 19 GHz with flat gain frequency response of 21 ± 0.5 dB. The noise figure is 3.5 ± 0.5 from 9 to 21 GHz. The chip size is only 1.5 mm × 1 mm.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; frequency response; gallium arsenide; integrated circuit design; low noise amplifiers; wideband amplifiers; GaAs; HEMT process; broadband frequency response; broadband low noise amplifier; flat frequency response; frequency 9 GHz to 25 GHz; noise figure; resistive feed-back technique; size 0.15 mum; size 1 mm; size 1.5 mm; small-signal gain; two-stage common source LNA; Broadband amplifiers; Gain; Gallium arsenide; Impedance; MMICs; Noise figure; GaAs; Low noise amplifier (LNA); Monolithic microwave integrated circuit (MMIC); broadband; pHEMT;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6230368

Filename

6230368