• DocumentCode
    2496386
  • Title

    Application of the Magnetoresistive Tensor Model to the Hard Axis Behavior of 81/19 Permalloy Magnetoresistive Sensor Elements

  • Author

    Haji-Sheikh, Michael ; Yoo, Y.Z.

  • Author_Institution
    Northern Illinois Univ., De Kalb
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    935
  • Lastpage
    938
  • Abstract
    Hard axis (HA) behavioral models for magnetoresistive sensors (from highly ordered thin films) often are developed in such a fashion as to concentrate on the HA behavior only. This work uses a tensor based approach and a single domain concept to demonstrate how to calculate the magnetoresistance (AMR) for a given resistor and concentrates on the in-plane AMR only.
  • Keywords
    Permalloy; magnetic sensors; magnetoresistance; magnetoresistive devices; AMR; Permalloy magnetoresistive sensor elements; hard axis behavior; magnetoresistance; magnetoresistive tensor model; single domain model; Anisotropic magnetoresistance; Conductivity; Equations; Magnetic sensors; Magnetization; Resistors; Tensile stress; Thin film sensors; Transistors; USA Councils;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2006. 5th IEEE Conference on
  • Conference_Location
    Daegu
  • ISSN
    1930-0395
  • Print_ISBN
    1-4244-0375-8
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2007.355620
  • Filename
    4178772
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2496386