DocumentCode
2496480
Title
Novel modulator structure permitting synchronous band filling of multiple quantum wells and extremely large phase shifts
Author
Chang, T.Y. ; Wegener, M. ; Zucker, J.E. ; Sauer, N.J. ; Jones, K.L. ; Chemla, D.S.
Author_Institution
AT&T Bell Lab., Holmdel, NJ, USA
fYear
1989
fDate
3-6 Dec. 1989
Firstpage
737
Lastpage
740
Abstract
The authors have demonstrated synchronous band filling of multiple quantum wells using a novel blockaded reservoir and quantum-well electron transfer structure (BRAQWETS). The resulting electroabsorptive response per quantum well is not only stronger than that produced by the quantum confined Stark effect (QCSE) but is also free of induced absorption below the bandgap. The measured electrorefractive response shows that the maximum phase shift that can be achieved in one absorption length is one order of magnitude larger than what is possible with QCSE. Furthermore, the dependence of induced refractive index change on the applied voltage is essentially linear. Design criteria for very-high-performance modulators with picosecond intrinsic speed are also discussed. It is concluded that BRAQWETS provides a novel basis for high-performance electroabsorption modulators as well as low-loss phase modulators and interferometric amplitude modulators and switches. With suitable engineering, it will also be possible to construct multi-quantum-well lasers and detectors using BRAQWETS.<>
Keywords
electro-optical devices; electroabsorption; optical modulation; semiconductor quantum wells; BRAQWETS; blockaded reservoir; electroabsorption modulators; electroabsorptive response; electrorefractive response; interferometric amplitude modulators; large phase shifts; linear electrorefractive effect; low-loss phase modulators; multiple quantum wells; picosecond intrinsic speed; quantum-well electron transfer structure; synchronous band filling; Absorption; Amplitude modulation; Electrons; Filling; Phase modulation; Photonic band gap; Potential well; Quantum well devices; Reservoirs; Stark effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-0817-4
Type
conf
DOI
10.1109/IEDM.1989.74160
Filename
74160
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