Analysis of high performance RF integrated passive circuits using the glass substrate

This paper describes the design, modeling, simulation, and fabrication of wafer level integrated passive devices (IPDs). These IPDs, comprising of a resistor, capacitor, and inductor, have been developed in the thin-film and thick metallization processing technology on silicon or high-resisitivity substrate. The electrical equivalent model of the single component structures is presented for design and scalable modeling, and the accurance is demonstrated by measurement. The fabrication method, new circuit design and materials of these devices or substrate lead to improve characteristics suitable for application in high-frequency RF module or system. The fabricated balanced-BPF have insertion loss less than 2.0 dB with die size of 2.1 mm by 1.4 mm for band range (2300 MHz-2700 MHz).