Title :
Resonant magneto-tunneling of holes in GaAs-Ga0.51In0.49P quantum well heterostructures
Author :
Sadaune, V. ; Lippens, D. ; Aristone, F. ; Maude, D.K. ; Portal, J.C. ; Poisson, M. A di Fore ; Brylinski, C.
Author_Institution :
IEMN-CHS-UMR CNRS, Villeneuve d´´Ascq, France
Abstract :
The authors report on a series of magneto-tunneling experiments on a p-type lattice matched GaAs-Ga0.51In0.49P double barrier heterostructure. The magnetic field was applied transverse to the tunneling direction for probing the in-plane dispersion of subbands in the quantum well. Several resonances are identified in the current voltage characteristics at low temperatures which are interpreted in terms of light and heavy hole resonant tunneling transitions. Mass reversal, nonparabolicity have been observed and a value of 4:1 was determined for the effective mass ratio between light and heavy holes
Keywords :
III-V semiconductors; effective mass; gallium arsenide; indium compounds; interface states; semiconductor heterojunctions; semiconductor quantum wells; tunnelling; GaAs-Ga0.51In0.49P; GaAs-Ga0.51In0.49P quantum well heterostructures; current voltage characteristics; effective mass ratio; heavy holes; hole resonant magneto-tunnelling; lattice matched double barrier heterostructure; light holes; low temperatures; magnetic field; mass reversal; nonparabolicity; p-type; resonances; resonant tunneling transitions; subbands; tunneling direction; Doping; Gallium arsenide; Lattices; Magnetic domains; Magnetic field measurement; Magnetic fields; Magnetic resonance; Magnetic tunneling; Resonant tunneling devices; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380542
