Title :
High quality InGaAs/InP quantum wires fabricated by electron beam lithography
Author :
Notomi, Masaya ; Tamamura, Toshiaki
Author_Institution :
NTT Optoelectron. Labs., Atsugi, Kanagawa, Japan
Abstract :
The authors report the fabrication of high-quality quantum well wires (QWWs) by combining of electron-beam lithography, reverse-mesa wet etching, and metal organic vapor phase epitaxial overgrowth. They examined lateral size fluctuations of QWWs using atomic force microscopy. The results clearly show that size fluctuation is reduced by reverse-mesa etching. Furthermore, these QWWs show several clear quantum confinement effects for optical experiments which are the photoluminescence (PL) energy shift according to wire-size, the appearance of lateral quantized levels, and the change of optical anisotropy according to wire size in PL and electroluminescence
Keywords :
III-V semiconductors; atomic force microscopy; electroluminescence; electron beam lithography; etching; gallium arsenide; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wires; vapour phase epitaxial growth; InGaAs/InP quantum wires; atomic force microscopy; electroluminescence; electron beam lithography; energy shift; fabrication; lateral quantized levels; lateral size fluctuations; metal organic vapor phase epitaxial overgrowth; optical anisotropy; optical experiments; photoluminescence; quantum confinement effects; reverse-mesa wet etching; wire-size; Atom optics; Atomic force microscopy; Electron beams; Fabrication; Fluctuations; Geometrical optics; Indium gallium arsenide; Indium phosphide; Lithography; Wires;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380544
