Title :
Comprehensive Zn doping investigation for GaInP/AlGaInP quantum well structures for high power visible lasers grown by MOCVD
Author :
Kadoiwa, K. ; Kato, M. ; Motoda, T. ; Mori, K. ; Fujii, N. ; Ochi, S. ; Yasuda, M. ; Sonoda, T. ; Murotani, T.
Author_Institution :
Mitsubishi Electric Corp., Itami, Hyogo, Japan
Abstract :
The authors found that the inactive Zn in GaInP/(Al0.7Ga0.3)InP quantum well structures peculiarly degraded the carrier life time which strongly affected the laser´s performance and reliability. The novel cap layer of n-(Al0.7Ga0.3)InP realized almost 100% activation of Zn in the p-(Al0.7Ga0.3)InP layer. The same temperature dependence on the threshold current density of visible lasers was obtained by introducing the novel n-cap layer. The kink level of 160 mW and the maximum light output power of 204 mW at 25°C were realized by introducing the novel cap layer of the n-(Al0.7Ga 0.3)InP for the window structured visible laser. This visible laser could achieve the finest reliability under stable continuous wave operation over 2600 hrs under 50 mW at 50°C
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; gallium compounds; indium compounds; quantum well lasers; semiconductor doping; zinc; 160 mW; 204 mW; 25 degC; 50 degC; 50 mW; GaInP-AlGaInP:Zn; GaInP/AlGaInP quantum well structures; MOCVD; Zn doping; cap layer; carrier life time; high power visible lasers; kink level; light output power; performance; quantum well structures; reliability; stable continuous wave operation; temperature dependence; threshold current density; window structured visible laser; Degradation; Doping; Indium phosphide; Laser stability; Power generation; Power lasers; Quantum well lasers; Temperature dependence; Threshold current; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380548
