• DocumentCode
    2497248
  • Title

    Carbon-doped p-type In0.53Ga0.47As and its application to InP/In0.53Ga0.47As heterojunction bipolar transistors

  • Author

    Tu, C.W.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    695
  • Lastpage
    698
  • Abstract
    P-type carbon-doped In0.53Ga0.47As grown by various epitaxial techniques is reviewed. High hole concentrations in In 0.53Ga0.47As can be achieved by using CCl4 or CBr4 as the carbon doping source. The highest hole concentration so far is 9 × 1019 cm-3 by gas-source molecular beam epitaxy with CBr4. Results of InP/In0.53Ga0.47A single and double heterojunction bipolar transistors are summarized
  • Keywords
    III-V semiconductors; carbon; carrier density; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor doping; semiconductor growth; C doping sources; InP-InGaAs:C; InP/In0.53Ga0.47As heterojunction bipolar transistors; epitaxial techniques; gas-source molecular beam epitaxy; hole concentrations; p-type; Carbon dioxide; Doping; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Lattices; Metallic superlattices; Molecular beam epitaxial growth; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380549
  • Filename
    380549
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2497248