Microanalysis of inhomogeneous reaction and Schottky-barrier change of Al/n-InP contacts upon rapid thermal annealing

Author

Lin, T.-C. ; Kaibe, H.T. ; Kaneshiro, C. ; Miyazaki, S. ; Okumura, T.

Author_Institution

Tokyo Metropolitan Univ., Hachioji, Tokyo, Japan

fYear

1993

fDate

19-22 Apr 1993

Firstpage

691

Lastpage

694

Abstract

Although metal contacts to oxidized n-InP show relatively high Schottky-barrier height, they will not be stable upon thermal annealing since the interfacial reaction might dissociate the oxides. The authors present the change in electrical properties of Al/n-InP contacts upon the rapid thermal annealing in relation to the interfacial reaction. In a certain range of the annealing temperature, a rectifying contact was obtained with a high Schottky-barrier height close to 0.7 eV, for which compositional and electrical microanalysis were carried out by means of the electron-probe microanalysis and the scanning internal-photoemission microscopy. The results are discussed

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; aluminium; electron probe analysis; indium compounds; photoemission; rapid thermal annealing; semiconductor-metal boundaries; surface chemistry; Al/n-InP contacts; Schottky-barrier change; annealing temperature; electrical properties; electron-probe microanalysis; inhomogeneous reaction; interfacial reaction; metal contacts; microanalysis; rapid thermal annealing; rectifying contact; scanning internal-photoemission microscopy; Artificial intelligence; Contacts; Indium phosphide; Microscopy; Optoelectronic devices; Rapid thermal annealing; Substrates; Temperature distribution; Thermal engineering; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380550

Filename

380550