Electron transport characteristics in wurtzite phase GaN and SiC for high-power and high-temperature device modeling

Temperature and doping dependencies of electron mobility in wurtzite GaN and SiC structures have been calculated using an iterative technique. The following scattering mechanisms, i.e., impurity, polar optical phonon, acoustic phonon, piezoelectric and electron plasmon are included in the calculation. Ionized impurity scattering has been treated beyond the Born approximation using the phase-shift analysis. It is found that the electron mobility decreases monotically as the temperature increases from 100K to 500K. The low temperature value of electron mobility increases significantly with increasing doping concentration. The iterative results are in fair agreement with other recent calculations obtained using the relaxation-time approximation and experimental methods.