Normal incidence intersubband absorption in InGaAs quantum wells

Author

Peng, L.H. ; Fonstad, C.G.

Author_Institution

Harvard Univ., Cambridge, MA, USA

fYear

1993

fDate

19-22 Apr 1993

Firstpage

588

Lastpage

591

Abstract

Multiple quantum well (MQW) C₁-to-C₂ intersubband transitions between quantized states in the QW conduction band are discussed. The Si-doped InAlAs/InGaAs MQW samples used in this study were grown by molecular beam epitaxy. The polarization activity of intersubband transitions is considered. The interest of this work is to (i) experimentally retrieve the correct polarization selection rules for intersubband transitions by devising polarization-resolved and angle-resolved IR measurement techniques, and (ii) theoretically develop a new model that fully explains the features of selection rules, absorption strength, and the splitting of the experimental observations

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared spectra; interface states; light polarisation; semiconductor epitaxial layers; semiconductor quantum wells; silicon; InAlAs-InGaAs:Si; angle-resolved IR measurement; intersubband absorption; molecular beam epitaxy; polarization activity; quantized states; quantum wells; selection rules; Absorption; Indium gallium arsenide; Infrared detectors; Nonlinear optics; Optical devices; Optical harmonic generation; Optical modulation; Optical polarization; Optical reflection; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380552

Filename

380552