Title :
XOR based on an InP/InGaAs light amplifying optical switch (LAOS)
Author :
Beyette, F.R. ; An, X. ; Geib, K.M. ; Feld, S.A. ; Hafich, M.J. ; Robinson, G.Y. ; Wilmsen, C.W.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Ft. Collins, CO, USA
Abstract :
An optoelectronic circuit that implements the XOR logic function is presented. The light amplifying optical switch (LAOS) device is used as a building block to realize the minterms AB¯ and BA¯ required for the XOR function. These minterm circuits were monolithically integrated on an InP/InGaAs wafer grown by gas source molecular beam epitaxy and tested on a probe stand. The functionality of the minterm circuit is demonstrated. Load line analysis shows that transistors with unmatched gain characteristics can yield high ON/OFF contrast ratio when transistors are integrated with the lower gain transistor driving the parallel combination of a LAOS device and a higher gain transistor
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; monolithic integrated circuits; optical logic; optical switches; semiconductor lasers; transistors; InP-InGaAs; ON/OFF contrast ratio; XOR logic function; gain transistor; gas source molecular beam epitaxy; light amplifying optical switch; load line analysis; minterm circuits; monolithically integrated; optoelectronic circuit; unmatched gain characteristics; Circuits; Indium gallium arsenide; Indium phosphide; Logic devices; Optical bistability; Optical control; Optical devices; Optical switches; Stimulated emission; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380553
