Title :
InP/GaInAs composite collector heterostructure bipolar transistors and circuits
Author :
Feygenson, A. ; Montgomery, R.K. ; Smith, P.R. ; Hamm, R.A. ; Haner, M. ; Yadvish, R.D. ; Panish, M.B. ; Temkin, H. ; Ritter, D.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
The authors investigate an alternative structure of a InP/GaInAs composite collector heterostructure bipolar transistor (CC HBT) which relied on a thin lightly doped quaternary layer of GaInAsP placed between GaInAs and InP regions of the collector instead of the doped interface. In this structure the accurate doping control of GaInAsP layer was not required. The resulting transistor showed high gain, high breakdown voltage BVCEO, fT of 137 GHz and improved scalability characteristics. The usefulness of high speed CC HBTs for circuits was demonstrated by 28 GHz bandwidth, 39 dbΩ gain monolithic transimpedance amplifiers and 32 Gbit/s hybrid optical receivers
Keywords :
III-V semiconductors; bipolar analogue integrated circuits; electric breakdown; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; microwave amplifiers; optical receivers; preamplifiers; 137 GHz; 28 GHz; 32 Gbit/s; InP-GaInAsP-GaInAs; bandwidth; breakdown voltage; composite collector heterostructure bipolar transistors; doped interface; gain; hybrid optical receivers; monolithic transimpedance amplifiers; scalability characteristics; Bandwidth; Bipolar transistors; Circuits; Doping; Heterojunction bipolar transistors; Indium phosphide; Optical amplifiers; Optical receivers; Scalability; Semiconductor optical amplifiers;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380556
