Fine analysis of emission structure of two-color semiconductor laser in near field zone

The aim of this work is investigation of the spatial distribution of different modes of two-color semiconductor IR laser emission. The attractive property of this laser is the possibility of generation of terahertz oscillation with the help of mixing of two different modes of laser radiation. For successful realization of this problem, the spatial matching of these modes is necessary. We have achieved a higher resolution that makes it possible to observe radiation map details with sizes of about 50 nanometers. The scanning near-field optical microscope (SNOM) resolution is determined by the size of the probe aperture (∼50-100 nm), which is much smaller than the wavelength of light. To obtain better resolution, measurement results have been processed further, taking into account the probe transfer function.