InGaAs/InP double heterostructure bipolar transistors for high speed and high voltage driver circuit application

Author

Bauknecht, R. ; Duran, H. ; Schmatz, M. ; Melchior, H.

Author_Institution

Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1993

fDate

19-22 Apr 1993

Firstpage

565

Lastpage

568

Abstract

InGaAs/InP double heterostructure bipolar transistors (HBTs) with small-signal current gains β of 90 and breakdown voltages BV_CEO in excess of 20 V are reported. Respective f_t and f_max values of 32 and 25 GHz were obtained for emitter dimensions of 7 × 10 μm². An HBT driver circuit is described for optical waveguide modulators and switches that alters the voltage on 5 pF loads by 5.7 V in 260 ps with mean switching currents of 90 mA

Keywords

III-V semiconductors; bipolar integrated circuits; driver circuits; electric breakdown; electro-optical switches; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical waveguide components; 20 V; 25 GHz; 260 ps; 32 GHz; 90 mA; InGaAs-InP; breakdown voltages; current gains; double heterostructure bipolar transistors; emitter dimensions; high speed driver circuit; high voltage driver circuit application; mean switching currents; optical waveguide modulators; switches; Bipolar transistors; Driver circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical modulation; Optical switches; Optical waveguides; Stimulated emission; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380558

Filename

380558