Title :
InGaAs/InP double heterostructure bipolar transistors for high speed and high voltage driver circuit application
Author :
Bauknecht, R. ; Duran, H. ; Schmatz, M. ; Melchior, H.
Author_Institution :
Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
InGaAs/InP double heterostructure bipolar transistors (HBTs) with small-signal current gains β of 90 and breakdown voltages BVCEO in excess of 20 V are reported. Respective ft and fmax values of 32 and 25 GHz were obtained for emitter dimensions of 7 × 10 μm2. An HBT driver circuit is described for optical waveguide modulators and switches that alters the voltage on 5 pF loads by 5.7 V in 260 ps with mean switching currents of 90 mA
Keywords :
III-V semiconductors; bipolar integrated circuits; driver circuits; electric breakdown; electro-optical switches; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical waveguide components; 20 V; 25 GHz; 260 ps; 32 GHz; 90 mA; InGaAs-InP; breakdown voltages; current gains; double heterostructure bipolar transistors; emitter dimensions; high speed driver circuit; high voltage driver circuit application; mean switching currents; optical waveguide modulators; switches; Bipolar transistors; Driver circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical modulation; Optical switches; Optical waveguides; Stimulated emission; Switching circuits;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380558
