DocumentCode
2497444
Title
GaInP/GaAs HBTs for microwave applications
Author
Delage, S. ; di Forte-Poisson, M.A. ; Pons, D.
Author_Institution
Thomson-CSF, Orsay, France
fYear
1993
fDate
19-22 Apr 1993
Firstpage
561
Lastpage
564
Abstract
The authors present an overview of the current status of the development of the GaInP/GaAs heterojunction bipolar transistor (HBT) technology. One of the most important advantages of using GaInP instead of GaAlAs is technological. Each of the GaInP and GaAs layers can be etched selectively with respect to the other. It is shown that GaInP/GaAs HBTs have identical or superior device performance to GaAlAs/GaAs HBTs and that the etching selectivity facilitates greatly the device fabrication and allows excellent device performance uniformity and reproducibility
Keywords
III-V semiconductors; etching; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; reviews; GaInP-GaAs; heterojunction bipolar transistor; microwave applications; overview; selective etching; Chemical elements; Degradation; Epitaxial growth; Etching; Gallium arsenide; Heterojunction bipolar transistors; Optical device fabrication; Optical materials; P-n junctions; Reproducibility of results;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380559
Filename
380559
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