DocumentCode :
2497461
Title :
The influence of coherent and incoherent transmission on I-V characteristics of RTD
Author :
Abramov, I.I. ; Goncharenko, I.A.
Author_Institution :
Belarusian State Univ. of Informatics & Radioelectronics, Minsk, Belarus
fYear :
2004
fDate :
13-17 Sept. 2004
Firstpage :
522
Lastpage :
523
Abstract :
The influence of coherent and incoherent transmission on the RTD´s I-V characteristics was investigated. We assume scattering rate dependence upon all resonant levels when calculating optical potential. Calculations were performed using a combined single-band model with scattering and one based on self-consistent solution of the Schrodinger and Poisson equations.
Keywords :
Poisson equation; Schrodinger equation; coherence; electric current; resonant tunnelling diodes; semiconductor device models; I-V characteristics; Poisson equation; RTD; Schrodinger equation; coherent transmission; combined single-band model; incoherent transmission; optical potential; resonant levels; scattering; scattering rate dependence; self-consistent solution; Gallium arsenide; Helium; Optical scattering; Resonance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
Type :
conf
DOI :
10.1109/CRMICO.2004.183316
Filename :
1390298
Link To Document :
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