First fabrication of continuously graded InGaAsP on GaAs for 0.98μm lasers

Author

Iketani, Akira ; Ohkubo, Michio ; Namiki, Shu ; Ijichi, Tetsuro ; Kikuta, Toshio

Author_Institution

Furukawa Electric Co., Ltd., Yokohama, Japan

fYear

1993

fDate

19-22 Apr 1993

Firstpage

553

Lastpage

556

Abstract

InGaAs/GaAs/InGaAsP continuously graded index separate confinement heterostructure (GRIN-SCH) lasers were fabricated by metal organic chemical vapor deposition (MOCVD) for the first time. Transmission electron microscope observation and secondary ion mass spectroscopy measurement show that the continuously graded InGaAsP layers were grown excellently. A very high characteristic temperature of 307K was obtained on the ridge waveguide lasers. Very stable and narrow far field patterns were obtained. The coupling to a single mode fiber was performed with high coupling efficiency of 60%, and output power as high as 78mW was achieved

Keywords

III-V semiconductors; chemical vapour deposition; gallium arsenide; gallium compounds; gradient index optics; indium compounds; ridge waveguides; secondary ion mass spectra; semiconductor growth; semiconductor heterojunctions; semiconductor lasers; transmission electron microscopy; waveguide lasers; 0.98 micron; 307 K; 78 mW; InGaAs-GaAs-InGaAsP; TEM; continuously graded index separate confinement heterostructure; coupling efficiency; metal organic chemical vapor deposition; output power; ridge waveguide lasers; secondary ion mass spectroscopy; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Indium gallium arsenide; MOCVD; Mass spectroscopy; Optical device fabrication; Organic chemicals; Transmission electron microscopy; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380561

Filename

380561