Title :
First fabrication of continuously graded InGaAsP on GaAs for 0.98μm lasers
Author :
Iketani, Akira ; Ohkubo, Michio ; Namiki, Shu ; Ijichi, Tetsuro ; Kikuta, Toshio
Author_Institution :
Furukawa Electric Co., Ltd., Yokohama, Japan
Abstract :
InGaAs/GaAs/InGaAsP continuously graded index separate confinement heterostructure (GRIN-SCH) lasers were fabricated by metal organic chemical vapor deposition (MOCVD) for the first time. Transmission electron microscope observation and secondary ion mass spectroscopy measurement show that the continuously graded InGaAsP layers were grown excellently. A very high characteristic temperature of 307K was obtained on the ridge waveguide lasers. Very stable and narrow far field patterns were obtained. The coupling to a single mode fiber was performed with high coupling efficiency of 60%, and output power as high as 78mW was achieved
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; gallium compounds; gradient index optics; indium compounds; ridge waveguides; secondary ion mass spectra; semiconductor growth; semiconductor heterojunctions; semiconductor lasers; transmission electron microscopy; waveguide lasers; 0.98 micron; 307 K; 78 mW; InGaAs-GaAs-InGaAsP; TEM; continuously graded index separate confinement heterostructure; coupling efficiency; metal organic chemical vapor deposition; output power; ridge waveguide lasers; secondary ion mass spectroscopy; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Indium gallium arsenide; MOCVD; Mass spectroscopy; Optical device fabrication; Organic chemicals; Transmission electron microscopy; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380561
