DocumentCode :
2497544
Title :
New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis
Author :
Arsentiev, I.N. ; Bobyi, A.V. ; Boltovets, N.S. ; Vanov, V.N. ; Konakova, R.V. ; Kudryk, Ya Ya ; Lytvyn, O.S. ; Milenin, V.V. ; Tarasov, I.S. ; Belyaev, A.E. ; Rusu, E.V.
Author_Institution :
Ioffe Phys.-Tech. Inst., Russian Acad. of Sci., Sankt-Peterburg, Russia
fYear :
2004
fDate :
13-17 Sept. 2004
Firstpage :
528
Lastpage :
529
Abstract :
A new technological approach to production of structurally perfect epitaxial films LPE-grown on "soft" porous n+-InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky diodes made on "soft" and "rigid" (standard) n+-InP substrates. The advantages of epitaxial layers grown on porous n+-InP substrates and barrier structures on their basis are demonstrated.
Keywords :
Schottky diodes; gold; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; substrates; surface morphology; titanium compounds; Au-TiBx-n-InP; InP; InP epitaxial layers; LPE; Schottky diodes; TiBx-n-InP; barrier structures; phase boundary; soft porous substrates; structurally perfect epitaxial films; surface morphology; Epitaxial layers; Indium phosphide; Manufacturing; Physics; Schottky barriers; Schottky diodes; Semiconductor diodes; Stress; Substrates; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
Type :
conf
DOI :
10.1109/CRMICO.2004.183319
Filename :
1390301
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2497544
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