New manufacturing technology for InP epitaxial layers and properties of Schottky diodes made on their basis

Author

Arsentiev, I.N. ; Bobyi, A.V. ; Boltovets, N.S. ; Vanov, V.N. ; Konakova, R.V. ; Kudryk, Ya Ya ; Lytvyn, O.S. ; Milenin, V.V. ; Tarasov, I.S. ; Belyaev, A.E. ; Rusu, E.V.

Author_Institution

Ioffe Phys.-Tech. Inst., Russian Acad. of Sci., Sankt-Peterburg, Russia

fYear

2004

fDate

13-17 Sept. 2004

Firstpage

528

Lastpage

529

Abstract

A new technological approach to production of structurally perfect epitaxial films LPE-grown on "soft" porous n⁺-InP substrates is considered. We studied surface morphology, boundary between phases in TiB_x-n-InP contact and I-V curves of Au-TiB_x-n-InP Schottky diodes made on "soft" and "rigid" (standard) n⁺-InP substrates. The advantages of epitaxial layers grown on porous n⁺-InP substrates and barrier structures on their basis are demonstrated.

Keywords

Schottky diodes; gold; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; substrates; surface morphology; titanium compounds; Au-TiB_x-n-InP; InP; InP epitaxial layers; LPE; Schottky diodes; TiB_x-n-InP; barrier structures; phase boundary; soft porous substrates; structurally perfect epitaxial films; surface morphology; Epitaxial layers; Indium phosphide; Manufacturing; Physics; Schottky barriers; Schottky diodes; Semiconductor diodes; Stress; Substrates; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on

Print_ISBN

966-7968-69-3

Type

conf

DOI

10.1109/CRMICO.2004.183319

Filename

1390301