Title :
MBE grown strained and unstrained InGaAs/InAlGaAs MQW lasers
Author :
Steinhagen, F. ; Lösch, R. ; Schlapp, W. ; Nickel, H. ; Hansmann, S. ; Hillmer, H. ; Janning, H. ; Hartnagel, H.L. ; Burkhard, H.
Author_Institution :
Inst. fur Hochfrequenztechnik, Tech. Hochschule Darmstadt, Germany
Abstract :
The authors demonstrated the growth and reproducibility of various molecular beam epitaxy InAlGaAs/InGaAs 1.5μm separate confinement heterostructure and graded index separate confinement heterostructure multi quantum well (MQW) laser diodes with lattice matched or compressively strained QWs. Various fundamental material and laser properties were studied for Fabry Perot and distributed feedback lasers. Epitaxial regrowth on Al-containing layers is described
Keywords :
III-V semiconductors; aluminium compounds; compressibility; distributed feedback lasers; gallium arsenide; gradient index optics; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1.5 micron; Fabry-Perot laser; InGaAs-InAlGaAs; compressively strained; confinement heterostructure; distributed feedback lasers; graded index separate confinement heterostructure; lattice matched; molecular beam epitaxy; Diode lasers; Distributed feedback devices; Indium gallium arsenide; Laser feedback; Lattices; Molecular beam epitaxial growth; Potential well; Quantum well devices; Quantum well lasers; Reproducibility of results;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380562
