MBE grown strained and unstrained InGaAs/InAlGaAs MQW lasers

Author

Steinhagen, F. ; Lösch, R. ; Schlapp, W. ; Nickel, H. ; Hansmann, S. ; Hillmer, H. ; Janning, H. ; Hartnagel, H.L. ; Burkhard, H.

Author_Institution

Inst. fur Hochfrequenztechnik, Tech. Hochschule Darmstadt, Germany

fYear

1993

fDate

19-22 Apr 1993

Firstpage

549

Lastpage

552

Abstract

The authors demonstrated the growth and reproducibility of various molecular beam epitaxy InAlGaAs/InGaAs 1.5μm separate confinement heterostructure and graded index separate confinement heterostructure multi quantum well (MQW) laser diodes with lattice matched or compressively strained QWs. Various fundamental material and laser properties were studied for Fabry Perot and distributed feedback lasers. Epitaxial regrowth on Al-containing layers is described

Keywords

III-V semiconductors; aluminium compounds; compressibility; distributed feedback lasers; gallium arsenide; gradient index optics; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1.5 micron; Fabry-Perot laser; InGaAs-InAlGaAs; compressively strained; confinement heterostructure; distributed feedback lasers; graded index separate confinement heterostructure; lattice matched; molecular beam epitaxy; Diode lasers; Distributed feedback devices; Indium gallium arsenide; Laser feedback; Lattices; Molecular beam epitaxial growth; Potential well; Quantum well devices; Quantum well lasers; Reproducibility of results;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380562

Filename

380562