Title :
MOVPE of strained InGaAsP/InGaAsP MQW structures for laser applications
Author :
Wiedemann, P. ; Klenk, M. ; Laube, G. ; Weinmann, R. ; Zielinski, E.
Author_Institution :
Alcatel SEL AG, Stuttgart, Germany
Abstract :
The authors present basic studies about the properties of compressively strained multi-quantum well (MQW) structures and their optimization for laser applications. Epitaxial growth of strained InGaAsP/InGaAsP MQW structures was performed in standard low pressure metal organic vapor phase epitaxial equipment. High resolution diffractometry measurements showed excellent agreement with simulations. Secondary ion mass spectrometry measurements showed good well to well homogeneity. By optimizing growth pauses and strain a best threshold current density was achieved
Keywords :
III-V semiconductors; compressibility; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; secondary ion mass spectra; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAsP; compressively strained multi-quantum well; diffractometry; laser applications; metal organic vapor phase epitaxial equipment; secondary ion mass spectrometry; threshold current density; Epitaxial growth; Epitaxial layers; Inductors; Laser applications; Lattices; Quantum well devices; Satellites; Temperature; Threshold current; X-ray lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380563
