DocumentCode
2497583
Title
Reduction of the linewidth enhancement factor in modulation doped strained quantum well lasers
Author
Yoshikuni, Yuzo
Author_Institution
NTT Opto-electronics Labs., Kanagawa, Japan
fYear
1993
fDate
19-22 Apr 1993
Firstpage
541
Lastpage
544
Abstract
Reduction of the linewidth enhancement factor is studied in InP based strained quantum well lasers. Theoretical analysis shows that the linewidth enhancement factor is greatly reduced in modulation doped strained quantum well lasers, and may be zero while keeping positive gain. The experimental evaluation exhibits a very small linewidth enhancement factor of around 1.0, both in the 1.3-μm and 1.5-μm wavelength regions in InGaAsP/InP modulation doped strained quantum well lasers
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; quantum well lasers; 1.3 to 1.5 micron; InGaAsP-InP; gain; linewidth enhancement factor; modulation doped strained quantum well lasers; Dispersion; Epitaxial layers; Indium phosphide; Laser theory; Laser transitions; Photonic band gap; Quantum mechanics; Quantum well lasers; Refractive index; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380564
Filename
380564
Link To Document