Title :
Reduction of the linewidth enhancement factor in modulation doped strained quantum well lasers
Author_Institution :
NTT Opto-electronics Labs., Kanagawa, Japan
Abstract :
Reduction of the linewidth enhancement factor is studied in InP based strained quantum well lasers. Theoretical analysis shows that the linewidth enhancement factor is greatly reduced in modulation doped strained quantum well lasers, and may be zero while keeping positive gain. The experimental evaluation exhibits a very small linewidth enhancement factor of around 1.0, both in the 1.3-μm and 1.5-μm wavelength regions in InGaAsP/InP modulation doped strained quantum well lasers
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; quantum well lasers; 1.3 to 1.5 micron; InGaAsP-InP; gain; linewidth enhancement factor; modulation doped strained quantum well lasers; Dispersion; Epitaxial layers; Indium phosphide; Laser theory; Laser transitions; Photonic band gap; Quantum mechanics; Quantum well lasers; Refractive index; Semiconductor lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380564
