Forming of AlGaAs nanodiode current-voltage characteristics

The analytic formula for Al_xGa_1-xAs resonant-tunneling diode current-voltage characteristic (VCC) is obtained. It is applicable at the following restrictions: (1) the voltage across the diode is less then U_peak; (2) the mole fraction × Al in barrier Al_xGa_1-xAs layers is more than 0.4; and (3) thickness of well GaAs layer is from 5 to 10 GaAs layers. The diagrams (degree of power-behaved VCC parameters of layers) and technological parameter tolerance are obtained from this formula. VCC shape I∼Uⁿ alters from n=1 up to n=5, when parameters of layers are changed. Parameters of layers were determined for I∼U³ VCC, diodes were made and subharmonic mixers on their basis were investigated. Good agreement of experiments with the theory is obtained.