Title :
Etching of InP with SiCl4 for smooth surfaces and vertical sidewalls at temperatures between 200°C and 300°C in a modified magnetron ion etching system
Author :
Schneider, J. ; Moser, M. ; Affolter, K.
Author_Institution :
Swiss PTT, Bern, Switzerland
Abstract :
The temperature dependence of etching InP with SiCl4 was investigated in detail in a magnetron ion etching system MRC MIE 710. Above 100°C the etch rate and the sidewall angle increase with increasing temperature until a flow-dependent saturation value of the etch rate and vertical sidewalls were obtained at a flow-dependent temperature between 200°C and 300°C. An electrical heating system was built into the specimen holder which was used also to transport the samples between loadlock and main chamber. The construction tolerates temperatures up to 300°C, and proved to withstand a chlorine plasma
Keywords :
III-V semiconductors; indium compounds; sputter etching; 100 to 300 degC; InP; electrical heating; flow-dependent saturation; loadlock; magnetron ion etching; temperature dependence; Cathodes; Etching; Heating; Indium phosphide; Plasma applications; Plasma temperature; Rough surfaces; Saturation magnetization; Surface roughness; Temperature dependence;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380566
