• DocumentCode
    2497612
  • Title

    Spin-polarized electron transport in double-barrier semimagnetic semiconductor nanostructures

  • Author

    Beletskii, N.N. ; Borysenko, S.A.

  • Author_Institution
    Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine
  • fYear
    2004
  • fDate
    13-17 Sept. 2004
  • Firstpage
    535
  • Lastpage
    536
  • Abstract
    A possibility for creating spin-polarized electron current sources with the help of a double-barrier resonant-tunneling semiconductor nanostructure composed of semimagnetic semiconductor (Zn1-xMnxSe) layers with different concentrations of manganese ions has been considered.
  • Keywords
    magnetoelectronics; nanoelectronics; resonant tunnelling devices; semimagnetic semiconductors; spin polarised transport; zinc compounds; Zn1-xMnxSe; double-barrier semimagnetic semiconductor; electron current sources; manganese ions; resonant-tunneling semiconductor; semiconductor nanostructures; spin-polarized electron transport; Ballistic magnetoresistance; Electrons; Filtering; Magnetic resonance; Magnetic semiconductors; Magnetic separation; Nanostructures; Polarization; Resonant tunneling devices; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
  • Print_ISBN
    966-7968-69-3
  • Type

    conf

  • DOI
    10.1109/CRMICO.2004.183322
  • Filename
    1390304
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2497612