DocumentCode :
2497612
Title :
Spin-polarized electron transport in double-barrier semimagnetic semiconductor nanostructures
Author :
Beletskii, N.N. ; Borysenko, S.A.
Author_Institution :
Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine
fYear :
2004
fDate :
13-17 Sept. 2004
Firstpage :
535
Lastpage :
536
Abstract :
A possibility for creating spin-polarized electron current sources with the help of a double-barrier resonant-tunneling semiconductor nanostructure composed of semimagnetic semiconductor (Zn1-xMnxSe) layers with different concentrations of manganese ions has been considered.
Keywords :
magnetoelectronics; nanoelectronics; resonant tunnelling devices; semimagnetic semiconductors; spin polarised transport; zinc compounds; Zn1-xMnxSe; double-barrier semimagnetic semiconductor; electron current sources; manganese ions; resonant-tunneling semiconductor; semiconductor nanostructures; spin-polarized electron transport; Ballistic magnetoresistance; Electrons; Filtering; Magnetic resonance; Magnetic semiconductors; Magnetic separation; Nanostructures; Polarization; Resonant tunneling devices; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
Type :
conf
DOI :
10.1109/CRMICO.2004.183322
Filename :
1390304
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2497612
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