Title :
Highly selective etching of InGaAs on InAlAs in HBr plasma
Author :
Adesida, I. ; Agarwala, S. ; Caneau, C. ; Bhat, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Abstract :
A selective reactive ion etching (SRIE) process for the etching of InGaAs on InAlAs in HBr plasmas has been developed. A selectivity value as high as 160 was achieved at a bias voltage of -100 V. To date, this is the highest selectivity ever reported for this material system. The etch-stop mechanism is inferred from Auger electron spectroscopy to be due the formation of involatile aluminum oxide. The SRIE process reported should be for the fabrication of InAlAs/InGaAs/InP heterostructure field effect transistors (HFETs)
Keywords :
Auger effect; III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; sputter etching; Auger electron spectroscopy; InAlAs-InGaAs-InP; InGaAs-InAlAs; bias voltage; heterostructure field effect transistors; selective reactive ion etching; Electrons; Etching; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Plasma applications; Plasma materials processing; Spectroscopy; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380567
