Title :
Simple simulation of the Gunn effect with the FDTD method
Author :
Hruskovec, T. ; Zhizhang Chen
Author_Institution :
Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS, Canada
Abstract :
The FDTD method is extended for the simulation of a simple model of n-type GaAs as used in Gunn or transferred electron device (TED) diodes. The model includes negative differential mobility. As Gunn oscillators have been proposed for generation of millimeter waves, this model may become useful for designing mm-wave circuits.
Keywords :
Gunn diodes; Gunn effect; Gunn oscillators; III-V semiconductors; digital simulation; finite difference time-domain analysis; gallium arsenide; millimetre wave circuits; semiconductor device models; FDTD method; GaAs; Gunn diodes; Gunn effect simulation; Gunn oscillators; III V semiconductor; millimeter waves generation; mm-wave circuits design; n-type semiconductor; negative differential mobility; transferred electron device diode; Cathodes; Computational modeling; Doping; Effective mass; Electron mobility; Equations; Finite difference methods; Gallium arsenide; Gunn devices; Semiconductor diodes;
Conference_Titel :
Antennas and Propagation Society International Symposium, 2000. IEEE
Conference_Location :
Salt Lake City, UT, USA
Print_ISBN :
0-7803-6369-8
DOI :
10.1109/APS.2000.874459
