DocumentCode
2497712
Title
Simple simulation of the Gunn effect with the FDTD method
Author
Hruskovec, T. ; Zhizhang Chen
Author_Institution
Dept. of Electr. & Comput. Eng., Dalhousie Univ., Halifax, NS, Canada
Volume
3
fYear
2000
fDate
16-21 July 2000
Firstpage
1372
Abstract
The FDTD method is extended for the simulation of a simple model of n-type GaAs as used in Gunn or transferred electron device (TED) diodes. The model includes negative differential mobility. As Gunn oscillators have been proposed for generation of millimeter waves, this model may become useful for designing mm-wave circuits.
Keywords
Gunn diodes; Gunn effect; Gunn oscillators; III-V semiconductors; digital simulation; finite difference time-domain analysis; gallium arsenide; millimetre wave circuits; semiconductor device models; FDTD method; GaAs; Gunn diodes; Gunn effect simulation; Gunn oscillators; III V semiconductor; millimeter waves generation; mm-wave circuits design; n-type semiconductor; negative differential mobility; transferred electron device diode; Cathodes; Computational modeling; Doping; Effective mass; Electron mobility; Equations; Finite difference methods; Gallium arsenide; Gunn devices; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation Society International Symposium, 2000. IEEE
Conference_Location
Salt Lake City, UT, USA
Print_ISBN
0-7803-6369-8
Type
conf
DOI
10.1109/APS.2000.874459
Filename
874459
Link To Document