Title :
A new pseudomorphic In0.2Ga0.8As layers HEMT using Al0.52In0.48P as barrier layer
Author :
Ng, G.I. ; Chan, Y.-J. ; Pavlidis, D. ; Kwon, Y. ; Brock, T. ; Kuo, J.M.
Author_Institution :
Dept. of EECS, Michigan Univ., Ann Arbor, MI, USA
Abstract :
A new pseudomorphic AlInP/InGaAs high electron mobility transistor (HEMT) grown by gas-source molecular-beam epitaxy has been demonstrated. This new pseudomorphic HEMT design offers: (i) a larger ΔEc than pseudomorphic Al0.22Ga0.78As/I with the same channel composition and thus better confinement, (ii) reduction of DX-center related problems (J. M. Kuo et al., 1993), and (iii) high etching selectivity between GaAs/InGaAs and AlInP and thus improved threshold voltage uniformity due to better gate recess control. The DC and microwave characteristics of submicron gate-length Al0.52In0.48P HEMTs are presented
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; deep levels; etching; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor growth; DC characteristics; DX-center related problems; In0.2Ga0.8As-Al0.52In0.48 P; channel composition; confinement; etching selectivity; gas-source molecular-beam epitaxy; gate recess control; high electron mobility transistor; microwave characteristics; threshold voltage; Carrier confinement; Etching; Fabrication; Gallium arsenide; Gold; HEMTs; Indium gallium arsenide; Leakage current; Schottky barriers; Schottky diodes;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380573
