• DocumentCode
    2497777
  • Title

    MOS-transistors on the Si:Ho in the technology of SHF-devices

  • Author

    Samokhval, V.V. ; Brinkevich, D.I. ; Prosolovich, V.S. ; Yankovski, Yu M.

  • Author_Institution
    Byelorussian State Univ., Minsk, Belarus
  • fYear
    2004
  • fDate
    13-17 Sept. 2004
  • Firstpage
    547
  • Lastpage
    548
  • Abstract
    MOSFET-transistors are active elements of SHF integrated circuits. The SHF-transistor parameters optimization method has been designed. It is shown that holmium doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by holmium allows the improving of the characteristics of MOS structures.
  • Keywords
    MOSFET; holmium; microwave integrated circuits; silicon; MOSFET-transistors; SHF integrated circuits; Si:Ho; holmium doping; silicon; Helium; Human computer interaction; MOSFET circuits; Rail to rail outputs; Roentgenium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
  • Print_ISBN
    966-7968-69-3
  • Type

    conf

  • DOI
    10.1109/CRMICO.2004.183328
  • Filename
    1390310
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2497777