Title :
Improved quality-factor of cascode-grounded active inductor
Author :
Guo, Zhenjie ; Zhang, Wanrong ; Xie, Hongyun ; Ding, Chunbao ; Lu, Zhiyi ; Xing, Guanghui ; Zhang, Yujie
Author_Institution :
Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Abstract :
To solve the existing problems such as lower quality factor and inductance value in common active inductor, a novel cascode-grounded active inductor circuit topology was proposed. The Rf is added and the RC feedback cascode positive feedback is formed used to substantially improve equivalent inductance and quality-factor. This novel active inductor was implemented by using a TSMC 0.35-μm 3P4M SiGe BiCMOS technology, which demonstrates a maximum quality factor of 2563 with an inductance of 3.165nH at 4.3GHz.
Keywords :
BiCMOS integrated circuits; inductors; network topology; BiCMOS technology; SiGe; TSMC; cascode-grounded active inductor; circuit topology; inductance value; quality-factor; Active inductors; Gyrators; Impedance; Inductance; Q factor; Radio frequency; Transistors;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6230446
