DocumentCode
2497796
Title
Improved quality-factor of cascode-grounded active inductor
Author
Guo, Zhenjie ; Zhang, Wanrong ; Xie, Hongyun ; Ding, Chunbao ; Lu, Zhiyi ; Xing, Guanghui ; Zhang, Yujie
Author_Institution
Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Volume
5
fYear
2012
fDate
5-8 May 2012
Firstpage
1
Lastpage
3
Abstract
To solve the existing problems such as lower quality factor and inductance value in common active inductor, a novel cascode-grounded active inductor circuit topology was proposed. The Rf is added and the RC feedback cascode positive feedback is formed used to substantially improve equivalent inductance and quality-factor. This novel active inductor was implemented by using a TSMC 0.35-μm 3P4M SiGe BiCMOS technology, which demonstrates a maximum quality factor of 2563 with an inductance of 3.165nH at 4.3GHz.
Keywords
BiCMOS integrated circuits; inductors; network topology; BiCMOS technology; SiGe; TSMC; cascode-grounded active inductor; circuit topology; inductance value; quality-factor; Active inductors; Gyrators; Impedance; Inductance; Q factor; Radio frequency; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location
Shenzhen
Print_ISBN
978-1-4673-2184-6
Type
conf
DOI
10.1109/ICMMT.2012.6230446
Filename
6230446
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