Advanced millimeter-wave InP HEMT MMICs

Author

Duh, K.H.G. ; Liu, S.M.J. ; Kao, M.Y. ; Wan, S.C. ; Tang, O.S.A. ; Ho, P. ; Chao, P.C. ; Smith, P.M.

Author_Institution

GE Electronics Lab., Syracuse, NY, USA

fYear

1993

fDate

19-22 Apr 1993

Firstpage

493

Lastpage

496

Abstract

InP-based high electron mobility transistors (HEMTs) developed have exhibited state-of-the-art low noise and power performance well up to W-band frequencies. High performance V- and W -band monolithic amplifiers based on these devices have also been developed. A full W-band InP three-stage monolithic microwave integrated circuit (MMIC) amplifier yields a measured noise matching and bias decoupling networks. A thorough design and analysis procedure was incorporated, including accurate characterization of the devices and circuit elements at W-band frequencies. The first pass success of these full band MMIC amplifiers indicates the importance of accurate device characterization and thorough circuit designs in millimeter wave monolithic IC development

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MIMIC; indium compounds; integrated circuit design; integrated circuit noise; millimetre wave amplifiers; HEMT MMICs; InP; InP-based high electron mobility transistors; V-band amplifier; W-band frequencies; analysis procedure; bias decoupling networks; design; low noise; measured noise matching; monolithic amplifiers; power performance; semiconductor; three-stage monolithic microwave integrated circuit; Frequency; HEMTs; Indium phosphide; Integrated circuit noise; MMICs; MODFETs; Microwave devices; Microwave integrated circuits; Millimeter wave transistors; Monolithic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380576

Filename

380576