Investigation of the causes of catastrophic degradation of silicon MOS-transistor parameters

The paper aims to discover the causes of the catastrophic degradation of the parameters of silicon MOS-transistors formed by ordinary planar technology. The basic causes of degradation are as follows: (1) thermal compression contact rupture, which can be explained by the formation of intermetallic compounds in the contact area, resulting in brittleness of the contacts; (2) failure of metallic interconnections and contact pad integrity, resulting from not observing the photolithography technological conditions as well as from the presence of a developed defect structure on the silicon surface and the formation of silicide compounds.