Title :
Passivation of the silicon semiconductor devices and microwave frequency attachments with the double layer dielectric films from yttrium oxide and dysprosium oxide
Author :
Rozhkov, V.A. ; Rodionov, M.A. ; Pashin, A.V. ; Guryanov, A.M.
Author_Institution :
Samara State Univ., Russia
Abstract :
The recombination properties of silicon passivated with double layer dielectric films of yttrium oxide and dysprosium oxide have been investigated. The values of effective lifetime and surface recombination velocity of the nonequilibrium charge carriers on the interface of the rare-earth elements/silicon-oxide have been defined.
Keywords :
dysprosium compounds; microwave integrated circuits; passivation; semiconductor-insulator boundaries; silicon; surface recombination; yttrium compounds; Si-Y2O3-Dy2O3; double layer dielectric films; dysprosium oxide; effective lifetime; integrated circuits; microwave frequency attachments; nonequilibrium charge carriers; rare-earth elements; recombination properties; silicon semiconductor device passivation; silicon-oxide; solid state. electronics; surface recombination velocity; yttrium oxide; Darmstadtium; Dielectric films; Frequency; Microwave devices; Microwave technology; Molecular beam epitaxial growth; Organizing; Passivation; Silicon; Yttrium;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183336
