AlInAs/GaInAs pseudomorphic HEMTs: Design and performances

Author

Dickmann, J. ; Riepe, K. ; Daembkes, H. ; Kunzel, H.

Author_Institution

Daimler-Benz Res. Center Ulm, Germany

fYear

1993

fDate

19-22 Apr 1993

Firstpage

461

Lastpage

464

Abstract

The search for suitable ways to improve high electron mobility transistor (HEMT) device performance has stimulated research on pseudomorphic layer structures. Parameters in the layer structure which will effect a foreseeable improvement on device performance are discussed. Recent interest has been focused on pseudomorphic InAlAs/InGaAs HEMTs. The present status in this field is reviewed and new facts based on HEMT simulations and experimental results are discussed. A main focus of the simulation is the design of the channel to allow a maximum InAs mole fraction while maintaining excellent device performance

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; AlInAs-GaInAs; AlInAs/GaInAs; device performance; high electron mobility transistor; maximum InAs mole fraction; pseudomorphic layer structures; semiconductor; Contact resistance; Diodes; HEMTs; Indium compounds; Lattices; MODFETs; PHEMTs; Photonic band gap; Poisson equations; Quantization;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380584

Filename

380584