Title :
Thermal stability of pseudomorphic InxGa1-xAs/InyAl1-yAs/InP heterostructures
Author :
Bennett, Brian R. ; Alamo, Jesús A del
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
The authors investigated the thermal stability of strained layers of InGaAs and InAlAs on InP. Epilayer and interface quality was assessed by high-resolution X-ray diffraction and electron mobility measurement as a function of the annealing cycle. Both techniques show that high-quality, pseudomorphic heterostructures are thermally stable at annealing temperatures of up to 700-800°C, despite exceeding the Matthews-Blakeslee critical layer thickness. These findings suggest that layers exceeding the predicted critical thickness may be successfully used in device heterostructures
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; annealing; electron mobility; gallium arsenide; indium compounds; interface structure; semiconductor heterojunctions; thermal stability; 700 to 800 degC; InGaAs-InAlAs-InP; Matthews-Blakeslee critical layer thickness; annealing cycle; electron mobility measurement; high-resolution X-ray diffraction; interface quality; pseudomorphic InxGa1-xAs/InyAl 1-yAs/InP heterostructures; semiconductor; strained layers; thermal stability; Annealing; Epitaxial layers; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical devices; Optical distortion; Substrates; Temperature measurement; Thermal stability;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380585
