DocumentCode
2497988
Title
High electron mobility in indium-rich pseudomorphic InxGa1-xAs/In0.52Al0.48As structures grown by MBE on InP
Author
Drouot, V. ; Gendry, M. ; Hollinger, G. ; Santinelli, C. ; Letartre, X. ; Viktorovitch, P.
Author_Institution
URA CNRS, Ecole Centrale de Lyon, Ecully, France
fYear
1993
fDate
19-22 Apr 1993
Firstpage
451
Lastpage
454
Abstract
High electron mobility pseudomorphic InxGa1-xAs/InAlAs heterostructures have been fabricated on InP for a wide range of In composition and growth temperatures. Both mobility and carrier concentrations can be increased by increasing the indium content in the channel up to x=0.75. The highest performance has been obtained with x=0.75 for a growth temperature of 500°C, when adapted growth conditions or growth interruptions are used to reduce the interface roughness. The electron mobility of such a structure reaches 14,500 cm2/V.s at 300 K and 101,000 cm2/V.s at 77 K for a two-dimensional electron gas concentration of 2.4 1012 cm-2
Keywords
III-V semiconductors; aluminium compounds; electron density; electron mobility; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; two-dimensional electron gas; 500 degC; HEMT; InxGa1-xAs/In0.52Al0.48 As structures; InGaAs-In0.52Al0.48As; InP; MBE; carrier concentrations; electron mobility; mobility; semiconductor; two-dimensional electron gas concentration; Charge transfer; Electron mobility; Epitaxial layers; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380586
Filename
380586
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