Title :
ECR-plasma-deposited gate dielectrics for InP MISFETs
Author :
Fathimulla, A. ; Gutierrez, D.
Author_Institution :
AlliedSignal Aerospace, Columbia, MD, USA
Abstract :
The authors present the properties of SiO2 and Si3 N4 films for various deposition parameters and the performance of an InP metal-insulated semiconductor FET (MISFET) with a SiO2 gate dielectric. The experiments were performed in a Plasma Therm SLR 770 ECR system with an Astex microwave source. Both Si and undoped InP substrates were used to study the quality of the films. The InP MISFET fabricated with the ECR-deposited SiO2 exhibited DC characteristics and drain current drift as good or better than those of MISFETs fabricated using other techniques for depositing gate dielectrics. The results indicate that the ECR-deposited films are excellent candidates for gate dielectrics and passivation of III-V devices
Keywords :
III-V semiconductors; MISFET; indium compounds; insulating thin films; plasma deposited coatings; silicon compounds; DC characteristics; ECR-plasma-deposited gate dielectrics; III-V devices; InP MISFETs; Plasma Therm SLR 770 ECR system; Si3N4; SiO2; deposition parameters; drain current drift; gate dielectrics; metal-insulated semiconductor FET; passivation; Dielectric devices; Dielectric substrates; III-V semiconductor materials; Indium phosphide; MISFETs; Microwave FETs; Passivation; Plasma properties; Plasma sources; Semiconductor films;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380587
