Physical modeling and experimental study of the InP MISFET for power applications

Author

Mouatakif, I. ; DeJaeger, J.C. ; Lefebvre, M. ; Salmer, G. ; Post, G.

Author_Institution

IEMN, UMR CNRS, Villeneuve d´´Ascq, France

fYear

1993

fDate

19-22 Apr 1993

Firstpage

443

Lastpage

446

Abstract

A theoretical and experimental investigation of the InP metal-insulated semiconductor FET (MISFET) is presented. It is based on a 2-D hydrodynamic model in order to study the physical behavior of the device making it possible to simulate depletion and enhancement operating modes. A complete microwave characterization has been done to validate the theoretical results and show the technological difficulties for making such devices. Power measurements are also presented using an active load pull power bench

Keywords

III-V semiconductors; MISFET; indium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device models; 2-D hydrodynamic model; InP; InP MISFET; active load pull power bench; microwave characterization; power applications; semiconductor; Charge carrier density; Computational modeling; Dielectrics and electrical insulation; Difference equations; Hydrodynamics; Indium phosphide; MISFETs; Microwave devices; Poisson equations; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380588

Filename

380588