Title :
Physical modeling and experimental study of the InP MISFET for power applications
Author :
Mouatakif, I. ; DeJaeger, J.C. ; Lefebvre, M. ; Salmer, G. ; Post, G.
Author_Institution :
IEMN, UMR CNRS, Villeneuve d´´Ascq, France
Abstract :
A theoretical and experimental investigation of the InP metal-insulated semiconductor FET (MISFET) is presented. It is based on a 2-D hydrodynamic model in order to study the physical behavior of the device making it possible to simulate depletion and enhancement operating modes. A complete microwave characterization has been done to validate the theoretical results and show the technological difficulties for making such devices. Power measurements are also presented using an active load pull power bench
Keywords :
III-V semiconductors; MISFET; indium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device models; 2-D hydrodynamic model; InP; InP MISFET; active load pull power bench; microwave characterization; power applications; semiconductor; Charge carrier density; Computational modeling; Dielectrics and electrical insulation; Difference equations; Hydrodynamics; Indium phosphide; MISFETs; Microwave devices; Poisson equations; Power measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380588
