DocumentCode :
2498046
Title :
Fabrication of micromachined quartz-crystal resonators using surface activated bonding of silicon and quartz wafer
Author :
Takahashi, Akihiro ; Ono, Takahito ; Lin, Yu-Ching ; Esash, Masayoshi
Author_Institution :
Tohoku Univ., Sendai
fYear :
2006
fDate :
22-25 Oct. 2006
Firstpage :
1305
Lastpage :
1308
Abstract :
In this paper, we present the fabrication and the characterization of the cantilever-shaped quartz crystal resonator for high sensitive force sensing. Fabrication process employs low-temperature plasma-activated bonding of silicon to quartz wafer using N2 plasma. Fabricated resonator have thickness of 2~20 mum, fundamental resonant frequency of thickness-shear mode of 76-720 MHz. The 20-mum-thick cantilever exhibits a high quality factor of 5700.
Keywords :
crystal resonators; micromachining; silicon; wafer bonding; N2 plasma; cantilever-shaped quartz crystal resonator; low-temperature plasma-activated bonding; micromachined quartz-crystal resonator fabrication; quartz wafer; silicon; Fabrication; Force sensors; Optical resonators; Plasma temperature; Resonant frequency; Scanning probe microscopy; Silicon; Surface treatment; Temperature sensors; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2006. 5th IEEE Conference on
Conference_Location :
Daegu
ISSN :
1930-0395
Print_ISBN :
1-4244-0375-8
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2007.355869
Filename :
4178864
Link To Document :
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