• DocumentCode
    2498046
  • Title

    Fabrication of micromachined quartz-crystal resonators using surface activated bonding of silicon and quartz wafer

  • Author

    Takahashi, Akihiro ; Ono, Takahito ; Lin, Yu-Ching ; Esash, Masayoshi

  • Author_Institution
    Tohoku Univ., Sendai
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    1305
  • Lastpage
    1308
  • Abstract
    In this paper, we present the fabrication and the characterization of the cantilever-shaped quartz crystal resonator for high sensitive force sensing. Fabrication process employs low-temperature plasma-activated bonding of silicon to quartz wafer using N2 plasma. Fabricated resonator have thickness of 2~20 mum, fundamental resonant frequency of thickness-shear mode of 76-720 MHz. The 20-mum-thick cantilever exhibits a high quality factor of 5700.
  • Keywords
    crystal resonators; micromachining; silicon; wafer bonding; N2 plasma; cantilever-shaped quartz crystal resonator; low-temperature plasma-activated bonding; micromachined quartz-crystal resonator fabrication; quartz wafer; silicon; Fabrication; Force sensors; Optical resonators; Plasma temperature; Resonant frequency; Scanning probe microscopy; Silicon; Surface treatment; Temperature sensors; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2006. 5th IEEE Conference on
  • Conference_Location
    Daegu
  • ISSN
    1930-0395
  • Print_ISBN
    1-4244-0375-8
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2007.355869
  • Filename
    4178864
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2498046