• DocumentCode
    2498066
  • Title

    Increased breakdown voltages in In1-x-yGaxAl yAs/InAlAs FETs

  • Author

    Fathimulla, A. ; Hier, H. ; Abrahams, J.

  • Author_Institution
    AlliedSignal Aerospace Co., Columbia, MD, USA
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    435
  • Lastpage
    438
  • Abstract
    The authors report the performance of In1-x-yGax AlyAs FETs lattice-matched to InP. An improvement in the drain-source breakdown voltage was achieved by adding Al in the channel of InGaAs/InAlAs FETs. The microwave gains are comparable to those of the InGaAs/InAlAs FETs. The DC and RF characteristics are discussed
  • Keywords
    III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; indium compounds; microwave field effect transistors; In1-x-yGaxAlyAs/InAlAs FETs; InGaAlAs-InAlAs; breakdown voltage; breakdown voltages; drain-source; microwave gains; semiconductor; Breakdown voltage; Electric breakdown; FETs; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MESFETs; MODFETs; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380590
  • Filename
    380590
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2498066