Title :
Increased breakdown voltages in In1-x-yGaxAl yAs/InAlAs FETs
Author :
Fathimulla, A. ; Hier, H. ; Abrahams, J.
Author_Institution :
AlliedSignal Aerospace Co., Columbia, MD, USA
Abstract :
The authors report the performance of In1-x-yGax AlyAs FETs lattice-matched to InP. An improvement in the drain-source breakdown voltage was achieved by adding Al in the channel of InGaAs/InAlAs FETs. The microwave gains are comparable to those of the InGaAs/InAlAs FETs. The DC and RF characteristics are discussed
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; indium compounds; microwave field effect transistors; In1-x-yGaxAlyAs/InAlAs FETs; InGaAlAs-InAlAs; breakdown voltage; breakdown voltages; drain-source; microwave gains; semiconductor; Breakdown voltage; Electric breakdown; FETs; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MESFETs; MODFETs; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380590
